Customization: | Available |
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Certification: | CCC, RoHS, CE |
Shape: | Rectangle |
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Limit Parameters | |||||
Symbol | Parameter | Conditions | Min | Max | Unit |
Bare die limit value | |||||
Tstg | Storage temperature | NA | -55 | 125 | ℃ |
Tamb | Operating Temperature | NA | -40 | 85 | ℃ |
VESD | ESD | human
body model(HBM) | ±10 | - | kV |
Pad limit value | |||||
Pi | Input
power | Max
input power consumption, PORT1/ PORT2 pad | - | 100 | mW |
wafer and chip main specification | |
Wafer | Specification |
Diameter | 200mm(8") |
Thickness | 125um±15um |
Number of pads | 2 |
Pad location | placed in chip corners |
Wafer backside | |
Material | Si |
Chip dimensions | |
Die size excluding scribe | 0.420mm*0.450mm=0.189mm? |
Scribe linewidth | x-dimension=25pm |
y-dimension=25pm | |
Passivation on front | |
Type | Sandwich
structure |
Material | PE-Nitride(on
top) |
Thickness | 1.75um
total thickness of passivation |
Polyimide spacer | 10um±2um |
A up ads | |
Pad material | >99.9%pure
Au |
Pad height | 3um±1um |
Bump size | 380um*140um |
RF Port Characteristiscs | ||||||
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
fi | Input
frequency | 840 | - | 960 | MHz | |
P(min) | Min
RFinput power | Single-portdipole
antenna[1] | - | -23 | dBm | |
Pi(max) | Max
RF input power | Max
RF input power | - | - | 20 | dBm |
Ci | Chip
inputcapacitance | Chip
parallel equivalence[3][5] | - | 0.96 | - | pF |
Rp | Chip
resistance | Chip
parallelequivalence[2][5] | - | 5 | - | KΩ |
Z | Chip impedance | RF
operating frequency 915MHz[4][5] | - | 7.14-j181 | - | Ω |
[1]Assume tag sensitivity on a 2.15dBi qain dipole antenna2Min operating power [2]Min operating power [3]Self-tune center capacitor [4]The antenna should match this impedance [5]Assume 50fF additional package capacitance |
Memory characteristics | ||||||
Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
tret | Retention time | Tamb ≤55°0 | 10 | - | - | year |